UPA814TKB Datasheet

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UPA814TKB
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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

碌

PA814T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2

脳

2SC5193) SMALL MINI MOLD

FEATURES

鈥?Low Voltage Operation, Low Phase Distortion

鈥?Low Noise

NF = 1.5 dB TYP. @V

= 3 V, I

= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @V

= 1 V, I

= 3 mA, f = 2 GHz

鈥?Large Absolute Maximum Collector Current

= 100 mA

鈥?A Small Mini Mold Package Adopted

鈥?Built-in 2 Transistors (2

脳

2SC5193)

PACKAGE DRAWINGS

(Unit: mm)

2.1 鹵0.1

1.25 鹵0.1

0.65 0.65

2.0 鹵0.2

1.3

ORDERING INFORMATION

0.9 鹵0.1

PART NUMBER

QUANTITY

Loose products

(50 PCS)

PACKING STYLE

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

0.7

碌

PA814T

碌

PA814T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T

= 25

擄

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

SYMBOL

CBO

CEO

EBO

RATING

100

150 in 1 element

200 in 2 elements

Note

150

鈥?5 to +150

UNIT

0 to 0.1

Junction Temperature

Storage Temperature

stg

藲C

PIN CONNECTIONS

1. Collector (Q1)

4. Emitter (Q2)

2. Base (Q2)

5. Emitter (Q1)

3. Collector (Q2)

6. Base (Q1)

Note

110 mW must not be exceeded in 1 element.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The information in this document is subject to change without notice.

Document No. P11467EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

漏

0.15

+0.1

鈥?

0.2

+0.1

鈥?

1995

型號

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