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UPA810T Datasheet

  • UPA810T

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 209.16KB

  • 3頁

  • CEL   CEL

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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
HIGH COLLECTOR CURRENT:
100 mA
0.65
2.0
0.2
1.3
2
5
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
0.1
1.25
0.1
1
6
0.2 (All Leads)
3
4
DESCRIPTION
NEC's UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
0.9
0.1
0.7
0.15
- 0.05
+0.10
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
0 ~ 0.1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
7
UNITS
碌A(chǔ)
碌A(chǔ)
70
3.0
120
4.5
0.7
9
1.2
2.5
1.5
MIN
UPA810T
S06
TYP
MAX
1.0
1.0
250
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005

UPA810T 產(chǎn)品屬性

  • NEC

  • Single

  • NPN

  • 3 V

  • 0.1 A

  • SO-6

  • 70

  • 250

  • SMD/SMT

UPA810T相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    廠商
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  • 英文版
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  • 英文版
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
    TRANSISTOR ARRAY
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  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
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