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UPA810TF Datasheet

  • UPA810TF

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 1頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm hight
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
0.65
2.0
0.2
1.3
2
1
UPA810TF
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
2.1
0.1
1.25
0.1
6
0.22
- 0.05
(All Leads)
5
+0.10
DESCRIPTION
The UPA810TF contains two NE856 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
3
4
0.6
0.1
0.45
0.13
鹵0.05
0 ~ 0.1
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25擄C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
擄C
擄C
RATINGS
20
12
3
100
110
200
150
-65 to +150
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
T
J
T
STG
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
7
UNITS
碌A(chǔ)
碌A(chǔ)
70
3.0
120
4.5
0.7
9
1.2
2.5
1.5
MIN
UPA810T
S06
TYP
MAX
1.0
1.0
250
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA810TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
鈥?Headquarters 鈥?4590 Patrick Henry Drive 鈥?Santa Clara, CA 95054-1817 鈥?(408) 988-3500 鈥?Telex 34-6393 鈥?FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) 鈥?Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99

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