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UPA808TC Datasheet

  • UPA808TC

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 3頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
SMALL PACKAGE OUTLINE:
1.5 mm x 1.1 mm, 33% smaller than conventional
SOT-363 package
LOW HEIGHT PROFILE
Just 0.55 mm high
FLAT LEAD STYLE:
Reduced lead inductance improves electrical
performance
HIGH COLLECTOR CURRENT:
IC MAX = 65 mA
UPA808TC
DESCRIPTION
The UPA808TC contains two NE687 NPN high frequency
silicon bipolar chips. NEC's new ultra small TC package is
ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascode LNAs and other applications.
鈥?/div>
鈥?/div>
鈥?/div>
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TC
(Top View)
1.50鹵0.1
1.10鹵0.1
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25擄C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
PT
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
擄C
擄C
RATINGS
20
10
1.5
1.50鹵0.1
0.20
+0.1
-0.05
65
0.96
0.48
1
6
TBD
TBD
150
-65 to +150
0.48
2
5
T
J
T
STG
3
4
PIN OUT
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Emitter Q2
5. Base Q2
6. Base Q1
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
0.11
+0.1
0.55鹵0.05
-0.05
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current
Feedback
Gain
1
at V
CE
= 3 V, I
C
= 7 mA
GHz
pF
dB
dB
7
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Capacitance
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
UNITS
碌A(chǔ)
碌A(chǔ)
70
9
100
11
0.4
8.5
1.3
2
0.8
MIN
UPA808TC
TC
TYP
MAX
0.1
0.1
140
Notes: 1.Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA808TC-T1, 3K per reel.
California Eastern Laboratories

UPA808TC相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    廠商
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
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  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
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