鈥?/div>
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
HIGH COLLECTOR CURRENT:
100mA
0.65
2.0
鹵
0.2
1
UPA801T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
鹵
0.1
1.25
鹵
0.1
6
0.2 (All Leads)
DESCRIPTION
NEC's UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
1.3
2
5
3
4
0.9
鹵
0.1
0.7
0.15
- 0.05
PIN OUT
0 ~ 0.1
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
+0.10
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
or Q
2
h
FE2
= Larger Value pf Q
1
or Q
2
GHz
pF
dB
dB
0.85
7
UNITS
碌A(chǔ)
碌A(chǔ)
70
3.0
120
4.5
0.7
9
1.2
2.5
1.5
MIN
UPA801T
S06
TYP
MAX
1.0
1.0
250
Notes: 1.Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
California Eastern Laboratories
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