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UPA678TB Datasheet

  • UPA678TB

  • P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA678TB
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA678TB is a switching device, which can be driven
directly by a 2.5 V power source.
The
碌
PA678TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.2
-0
+0.1
+0.1
0.15
-0.05
FEATURES
鈥?/div>
2.5 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 1.45
鈩?/div>
MAX. (V
GS
=
鈭?.5
V, I
D
=
鈭?.20
A)
R
DS(on)2
= 1.55
鈩?/div>
MAX. (V
GS
=
鈭?.0
V, I
D
=
鈭?.20
A)
R
DS(on)3
= 2.98
鈩?/div>
MAX. (V
GS
=
鈭?.5
V, I
D
=
鈭?.15
A)
鈥?/div>
Two MOS FET circuits in same size package as SC-70
1.25 鹵0.1
2.1 鹵0.1
6
5
4
0 to 0.1
1
2
3
0.7
0.9 鹵0.1
0.65
0.65
1.3
2.0 鹵0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-88 (SSP)
碌
PA678TB
Marking: XA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
鈭?0
m12
m0.25
m1.00
0.2
150
鈥?5 to +150
PIN CONNECTION (Top View)
V
V
A
A
W
擄C
擄C
1
2
3
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
6
5
4
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2
2.
Mounted on FR-4 board of 2500 mm x 1.1 mm
Caution
This product is electrostatic-sensitive device due to low ESD capability and
shoud be handled with caution for electrostatic discharge.
V
ESD
=
鹵100
V TYP. (C = 200 pF, R = 0
鈩?
Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16607EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003

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