DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA672T
N-CHANNEL MOS FET ARRAY
FOR SWITCHING
The
碌
PA672T is a super-mini-mold device provided
with two MOS FET elements. It achieves high-density
mounting and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.2
鈥?
+0.1
0.15
鈥?.05
+0.1
FEATURES
鈥?Two MOS FET circuits in package the same size as
SC-70
鈥?Automatic mounting supported
1.25 鹵0.1
2.1 鹵0.1
6
5
4
0 to 0.1
1
2
3
0.7
0.9 鹵0.1
0.65
0.65
1.3
2.0 鹵0.2
PIN CONNECTION
6
5
4
1
2
3
1. Source 1 (S1)
2. Gate 1 (G1)
3. Drain 2 (D2)
4. Source 2 (S2)
5. Gate 2 (G2)
6. Drain 1 (D1)
Marking: MA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50 %
TEST CONDITIONS
RATINGS
50
鹵7.0
100
200
200 (Total)
150
鈥?5 to +150
UNIT
V
V
mA
mA
mW
藲C
藲C
Document No. G11259EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996
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