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UPA620TT Datasheet

  • UPA620TT

  • N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA620TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA620TT is a switching device which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0鹵0.2
0.25鹵0.1
6
5
4
2.1鹵0.1
1.6
0
~
0.05
FEATURES
鈥?/div>
2.5 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 38 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 2.5 A)
R
DS(on)2
= 39 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 2.5 A)
R
DS(on)3
= 54 m鈩?MAX. (V
GS
= 2.5 V, I
D
= 2.5 A)
0.65
1
2
3
0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.05 S
0.15
+0.1
鈭?.05
Marking: WA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25擄C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
鹵12
鹵5.0
鹵20
0.2
1.5
150
鈥?5 to +150
V
V
A
A
W
W
擄C
擄C
Gate
0.2
+0.1
鈭?.05
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Note2
0.4鹵0.1
碌
PA620TT
6 pin WSOF (1620)
1,2,5,6: Drain
3
: Gate
4
: Source
0.1
M
S
Body
Diode
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2
2.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
鈮?/div>
5 sec.
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16111EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
漏
2002

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