DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The
碌
PA610TA is a switching device which can be driven
directly by a 2.5 V power source.
The
碌
PA610TA has excellent switching characteristics, and is
2.8 鹵0.2
Package Drawings (unit: mm)
0.65
+0.1
鈥?.15
0.32
+0.1
鈥?.05
0.16
+0.1
鈥?.06
suitable for use as a high-speed switching device in digital circuits.
1.5
0 to 0.1
FEATURES
鈥?Can be driven by a 2.5 V power source.
鈥?Low Gate Cut-off Voltage.
0.95 0.95
1.9
2.9 鹵0.2
0.8
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
鈥?0
+20
+0.1
+0.4
Note
V
V
A
A
mW
擄C
擄C
Equivalent Circuit
Drain
300 (TOTAL)
150
鈥?5 to +150
Gate
Gate Protect
Diode
Source
Internal Diode
Note
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
Pin Connection (Top View)
6
5
4
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
1
2
3
Marking : JB
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11199EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
漏
1996
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