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UPA2790GR Datasheet

  • UPA2790GR

  • SWITCHING N- AND P-CHANNEL POWER MOS FET

  • 11頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2790GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The
碌
PA2790GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
8
PACKAGE DRAWING (Unit: mm)
5
N-channel
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
P-channel
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 鹵0.3
FEATURES
鈥?/div>
Low on-state resistance
N-channel R
DS(on)1
= 28 m鈩?MAX. (V
GS
= 10 V, I
D
= 3 A)
1.8 Max.
R
DS(on)2
= 40 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 3 A)
P-channel R
DS(on)1
= 60 m鈩?MAX. (V
GS
=
鈭?0
V, I
D
=
鈭?
A)
R
DS(on)2
= 80 m鈩?MAX. (V
GS
=
鈭?.5
V, I
D
=
鈭?
A)
鈥?/div>
Low input capacitance
N-channel C
iss
= 500 pF TYP.
P-channel
C
iss
= 460 pF TYP.
1
4
+0.05
鈥?.10
5.37 Max.
4.0
1.0
0.20
0.10 Min.
0.6
1.27
0.12 M
0.40
+0.11
鈥?.05
0.5 鹵0.2
0.10
鈥?/div>
Built-in gate protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
EQUIVALENT CIRCUITS
N-channel
Drain
P-channel
Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Gate
Protection
Diode
Source
Gate
Body
Diode
Gate
Body
Diode
碌
PA2790GR
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16954EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004

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