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UPA2780GR Datasheet

  • UPA2780GR

  • SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE

  • 66.38KB

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2780GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The
碌
PA2780GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
鈥?/div>
Built a Schottky Barrier Diode
鈥?/div>
Low on-state resistance
R
DS(on)1
= 6.2 m鈩?TYP. (V
GS
= 10 V, I
D
= 7 A)
R
DS(on)2
= 8.7 m鈩?TYP. (V
GS
= 4.5 V, I
D
= 7 A)
R
DS(on)3
= 10.3 m鈩?TYP. (V
GS
= 4.0 V, I
D
= 7 A)
鈥?/div>
Low C
iss
: C
iss
= 1200 pF TYP.
鈥?/div>
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
鈥?.05
6.0 鹵0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 鹵0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA2780GR
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C. All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
[MOSFET]
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
I
F(AV)
P
T
P
T
T
ch
, T
j
T
stg
30
鹵20
鹵14
鹵56
2.5
2
1
150
鈭?5
to + 150
V
V
A
A
A
W
W
擄C
擄C
Gate
Protection
Diode
Source
Gate
Schottky
Diode
Average Forward Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature
[SCHOTTKY]
Note3
Note3
[MOSFET]
[SCHOTTKY]
Channel & Junction Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Rectangle wave, 50% Duty Cycle
2
3.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16419EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002

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