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UPA2754 Datasheet

  • UPA2754

  • UPA2754GR Data Sheet | Data Sheet[01/2003]

  • 7頁(yè)

  • ETC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2754GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
碌
PA2754GR is Dual N-channel MOS Field Effect
Transistor designed for Li-ion battery protection circuit
and power management application.
8
PACKAGE DRAWING (Unit: mm)
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 鹵0.3
4.4
+0.10
鈥?.05
FEATURES
鈥?/div>
Dual chip type
鈥?/div>
Low on-state resistance
R
DS(on)1
= 14.5 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
R
DS(on)2
= 15.0 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 5.5 A)
R
DS(on)4
= 18.6 m鈩?MAX. (V
GS
= 2.5 V, I
D
= 5.5 A)
鈥?/div>
Low C
iss
: C
iss
= 1940 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
鈥?/div>
Built-in G-S protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 鹵0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
碌
PA2754GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note2
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
鹵12
鹵11
鹵88
2.0
1.7
150
鈭?5
to +150
11
12.1
V
V
A
A
W
W
擄C
擄C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain Current (pulse)
Total Power Dissipation (2 units)
Total Power Dissipation (1 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
Body
Diode
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1%
2
2.
T
A
= 25擄C, Mounted on ceramic substrate of 2000 mm x 2.2 mm
3.
Starting T
ch
= 25擄C, V
DD
= 15 V, R
G
= 25
鈩?
V
GS
= 12
鈫?/div>
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G15816EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2001

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