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UPA2730TP Datasheet

  • UPA2730TP

  • SWITCHING P-CHANNEL POWER MOSFET

  • 82.32KB

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
碌
PA2730TP which has a heat spreader is P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery
protection circuit.
1.49 鹵0.21
1.44 TYP.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 7.0 m鈩?MAX. (V
GS
= 鈥?0 V, I
D
= 鈥?.5 A)
R
DS(on)2
= 10.5 m鈩?MAX. (V
GS
= 鈥?.5 V, I
D
= 鈥?.5 A)
R
DS(on)3
= 12.0 m鈩?MAX. (V
GS
= 鈥?.0 V, I
D
= 鈥?.5 A)
鈥?/div>
Low C
iss
: C
iss
= 4670 pF TYP.
鈥?/div>
Small and surface mount package (Power HSOP8)
1
5.2
+0.17
鈥?.2
4
0.8 鹵0.2
S
+0.10
鈥?.05
6.0 鹵0.3
4.4 鹵0.15
0.05 鹵0.05
0.15
1.27 TYP.
0.40
1
+0.10
鈥?.05
0.10 S
0.12 M
1.1 鹵0.2
4
2.9 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
8
2.0 鹵0.2
9
4.1 MAX.
碌
PA2730TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Note1
Drain Current (DC)
Note2
Drain Current (pulse)
Total Power Dissipation (T
C
= 25擄C)
Note1
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Note3
Single Avalanche Current
Note3
Single Avalanche Energy
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
鈭?0
m20
m42
m20
m120
40
3
150
鈭?5
to + 150
鈭?5
22.5
V
V
A
A
A
W
W
擄C
擄C
A
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
3.
Starting T
ch
= 25擄C, V
DD
= 鈥?5 V, R
G
= 25
鈩?
L = 100
碌
H, V
GS
= 鈥?0
鈫?/div>
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No.
G15983EJ1V0DS00 (1st edition)
Date Published November 2002 NS CP(K)
Printed in Japan
2002

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