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UPA2706TP Datasheet

  • UPA2706TP

  • SWITCHING N-CHANNEL POWER MOSFET

  • 148.60KB

  • 7頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2706TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
碌
PA2706TP, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
碌
PA2706TP
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 15 m鈩?MAX. (V
GS
= 10 V, I
D
= 5.5 A)
R
DS(on)2
= 22.5 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
鈥?/div>
Low C
iss
: C
iss
= 660 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
鈥?/div>
Small and surface mount package (Power HSOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
鹵20
鹵20
鹵11
鹵44
15
3
150
鈭?5
to +150
11
12.1
V
V
A
A
A
W
W
擄C
擄C
A
mJ
Drain Current (pulse)
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note1
I
AS
E
AS
Notes 1.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec
2.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
3.
Starting T
ch
= 25擄C, V
DD
= 15 V, R
G
= 25
鈩?
L = 100
碌
H, V
GS
= 20
鈫?/div>
0 V
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16621EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan
2003

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