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UPA2706GR Datasheet

  • UPA2706GR

  • SWITCHING N-CHANNEL POWER MOSFET

  • 7頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2706GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
碌
PA2706GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 15 m鈩?MAX. (V
GS
= 10 V, I
D
= 5.5 A)
R
DS(on)2
= 22.5 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
鈥?/div>
Low C
iss
: C
iss
= 660 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
鈥?/div>
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
鈥?.05
6.0 鹵0.3
4.4
0.8
1.8 MAX.
1.44
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.05 MIN.
0.5 鹵0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
碌
PA2706GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, All terminals are connected)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
鹵20
鹵11
鹵44
2.0
150
鈭?5
to + 150
11
12.1
V
V
A
A
W
擄C
擄C
A
mJ
Gate
Body
Diode
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Gate
Protection
Diode
Source
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
3.
Starting T
ch
= 25擄C, V
DD
= 15 V, R
G
= 25
鈩?
L = 100
碌
H, V
GS
= 20
鈫?/div>
0 V
Caution
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16236EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2003

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