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UPA2701TP Datasheet

  • UPA2701TP

  • SWITCHING N-CHANNEL POWER MOSFET

  • 64.67KB

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2701TP
SWITCHING
N-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The
碌
PA2701TP, which has a heat spreader, is N-Channel
MOS Field Effect Transistor designed for DC/DC converter and
power management applications of notebook computers.
1.49 鹵0.21
1.44 TYP.
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
1
5.2
+0.17
鈥?.2
4
6.0 鹵0.3
0.8 鹵0.2
+0.10
鈥?.05
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 7.5 m鈩?MAX. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 11.6 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
鈥?/div>
Low C
iss
: C
iss
= 1200 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
鈥?/div>
Small and surface mount package (Power HSOP8)
4.4 鹵0.15
S
0.05 鹵0.05
0.15
1.27 TYP.
0.40
+0.10
鈥?.05
1.1 鹵0.2
0.10 S
0.12 M
1
4
2.0 鹵0.2
2.9 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
8
9
4.1 MAX.
碌
PA2701TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (DC) (T
A
= 25擄C)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
Note1
30
鹵20
鹵35
鹵16
鹵80
28
3
150
鈥?5 to +150
18
32.4
V
V
A
A
A
W
W
擄C
擄C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Body
Diode
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
3.
Starting T
ch
= 25擄C, V
DD
= 15 V, R
G
= 25
鈩?
L = 100
碌
H, V
GS
= 20
鈫?/div>
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15844EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
2002

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