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UPA2451TL Datasheet

  • UPA2451TL

  • TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 30V V(BR)DS...

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  • ETC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA2451
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA2451 is a switching device which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
1
PACKAGE DRAWING (Unit : mm)
6
5
4
0.5鹵0.1
2
3
FEATURES
鈥?/div>
2.5 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 20 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)2
= 21 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
R
DS(on)3
= 25 m鈩?MAX. (V
GS
= 3.1 V, I
D
= 4.0 A)
R
DS(on)4
= 32 m鈩?MAX. (V
GS
= 2.5 V, I
D
= 4.0 A)
鈥?/div>
Built-in G-S protection diode against ESD
0.25
+0.1
鈭?.05
4.4鹵0.1
5.0鹵0.1
7
(0.9)
PART NUMBER
PACKAGE
6PIN HWSON (4521)
(0.15)
(3.05)
(0.50)
5,6: Source 2
4: Gate 2
碌
PA2451TL
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
Drain Current (DC) (T
A
= 25擄C)
I
D(DC)
Note1
Drain Current (pulse)
I
D(pulse)
Note2
Total Power Dissipation (2unit)
P
T1
Note3
Total Power Dissipation (2unit)
P
T2
Channel Temperature
T
ch
Storage Temperature
T
stg
30
鹵12
鹵8.2
鹵80
2.5
0.7
150
鈥?5 to +150
V
V
A
A
W
W
擄C
擄C
1,2: Source 1
3: Gate 1
7: Drain
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Gate
Protection
Diode
Source1
Body
Diode
(1.45)
ORDERING INFORMATION
0.05
+0
鈭?.05
0.145鹵0.05
0.8 MAX.
Gate2
Gate
Protection
Diode
Source2
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
T
A
= 25擄C Mounted on ceramic board
3.
T
A
= 25擄C Mounted on FR4 board
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15621EJ1V0DS00 (1st edition)
Date Published March 2002 NS CP(K)
Printed in Japan
漏
2001
1.85鹵0.1
Body
Diode

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