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UPA1760 Datasheet

  • UPA1760

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1760
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1760 is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8
5
1
2
7, 8
3
4
5, 6
; Source1
; Gate1
; Drain1
; Source2
; Gate2
; Drain2
6.0 鹵0.3
4.4
+0.10
鈥?.05
FEATURES
鈥?/div>
Dual Chip Type
1.44
鈥?/div>
Low On-Resistance
5
5
5
R
DS(on)1
= 26.0 m鈩?MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 36.0 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 42.0 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
鈥?/div>
Low C
iss
: C
iss
= 760 pF TYP.
鈥?/div>
Built-in G-S Protection Diode
鈥?/div>
Small and Surface Mount Package (Power SOP8)
1.8 Max.
1
5.37 Max.
4
0.8
0.15
0.05 Min.
0.5 鹵0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
鈥?.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
鹵20
鹵8.0
鹵32
1.7
2.0
150
鈥?5 to + 150
8
6.4
V
V
A
A
W
W
擄C
擄C
A
mJ
Gate
Body
Diode
Drain
EQUIVALENT CIRCUIT
(1/2 Circuit)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
5
5
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Gate
Protection
Diode
Source
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
5
5
2.
T
A
= 25 擄C, Mounted on ceramic substrate of 2000 mm x 1.6 mm
3.
Starting T
ch
= 25 擄C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13891EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1998,1999

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