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UPA1700G Datasheet

  • UPA1700G

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | S...

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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTOR
碌
PA1700
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Tran-
sistor designed for DC/DC converter and power man-
agement applications of note book computers.
8
PACKAGE DIMENSIONS
(in millimeter)
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
FEATURES
鈥?Low On-Resistance
R
DS(on)1
= 27 m鈩?Typ. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 50 m鈩?Typ. (V
GS
= 4 V, I
D
= 3.5 A)
1.44
鈥?Low C
iss
C
iss
= 850 pF Typ.
1.8 Max
1
5.37 Max
4
6.0鹵0.3
4.4
0.8
鈥?Small and Surface Mount Package
(Power SOP8)
0.15
+0.10
鈥?.05
鈥?Built-in G-S Protection Diode
0.05 Min
0.5鹵0.2
1.27
0.78 Max
0.12 M
0.10
0.40
+0.10
鈥?.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA1700G
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation
(T
A
= 25
擄C)**
Channel Temperature
Storage Temperature
T
CH
T
stg
150
鈥?5 to +150
擄C
擄C
V
DSS
V
GDS
I
D(DC)
I
D(pulse)
P
T
30
鹵20
鹵7.0
鹵28
2.0
V
V
A
A
W
Gate Protection
Diode
Source
To keep good radiate condition,
It is recommended that all pins
are soldering to print board.
Gate
Body
Diode
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
**
Mounted on ceramic substate of 1200 mm
2
脳
0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10479EJ2V0DS00 (2nd edition)
Date Published September 1995 P
Printed in Japan
漏
1995

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