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UPA1700A Datasheet

  • UPA1700A

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 80.69KB

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
碌
PA1700A
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management of notebook computers.
8
PACKAGE DIMENSIONS
(in millimeter)
5
FEATURES
鈥?Low On-Resistance
R
DS(on)1
= 27 m鈩?Max. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 50 m鈩?Max. (V
GS
= 4 V, I
D
= 3.5 A)
鈥?Low Input Capacitance
1.44
1.8 MAX.
1
5.37 MAX.
+0.10
鈥?.05
1, 2, 3 ; Source
; Gate
4
5, 6, 7, 8 ; Drain
4
6.0 鹵0.3
4.4
0.8
C
iss
= 820 pF Typ.
鈥?Built-in G-S Protection Diode
鈥?Small and Surface Mount Package
(Power SOP8)
0.15
0.05 MIN.
0.5 鹵0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C, all terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note 1
Total Power Dissipation (T
A
= 25
擄C)
Note 2
Channel Temperature
Storage Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
脳
1.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
鹵20
鹵7.0
鹵28
2.0
150
鈥?5 to +150
V
V
A
A
W
藲C
藲C
Gate
Gate
Protection
Source
Diode
Body
Diode
Drain
The information in this document is subject to change without notice.
Document No. G12008EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
漏
1996

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