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UPA1478H Datasheet

  • UPA1478H

  • NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE D...

  • 6頁

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR ARRAY
碌
PA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
鈥?/div>
Surge Absorber (Zener Diode) built in.
鈥?/div>
Easy mount by 0.1 inch of terminal interval.
鈥?/div>
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
10
1.4
0.6 鹵0.1
2.54
1.4
0.5 鹵0.1
碌
PA1478H
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
3
2
1
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
EBO
E
CEO (SUS)
I
C(DC)
I
C(pulse)
*
P
T1
**
P
T2
***
T
J
T
stg
31
鹵4
31
鹵4
7
40
鹵2
鹵4
3.5
28
150
V
V
V
mJ/unit
A/unit
A/unit
W
W
藲C
(B)
Collector to Emitter Voltage V
CEO
(C)
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
1, 10
: Emitter (E)
R
1
R
2
(E)
R
1
= 10 k鈩?/div>
.
.
R
2
= 500
鈩?/div>
.
.
鈥?5 to +150 藲C
*
PW
鈮?/div>
300
碌
s, Duty Cycle
鈮?/div>
10 %
**
4 Circuits, T
a
= 25 藲C
***
4 Circuits, T
c
= 25 藲C
The information in this document is subject to change without notice.
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan
漏
10 MIN.
2.5
1994

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