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UP04878 Datasheet

  • UP04878

  • Silicon N-channel MOSFET

  • 82.08KB

  • 3頁

  • PANASONIC

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Composite Transistors
UP04878
Silicon N-channel MOSFET
Unit: mm
(0.30)
0.20
+0.05
鈥?.02
4
1.20
鹵0.05
1.60
鹵0.05
0.10
鹵0.02
For switching
鈻?/div>
Features
鈥?/div>
Allowing 2.5 V drive
鈥?/div>
Incorporating a built-in gate protection-diode
鈥?/div>
Reduction of the mounting area and assembly cost by one half
6
5
1
2
3
(0.50)(0.50)
1.00
鹵0.05
1.60
鹵0.05
5藲
(0.20)
Display at No.1 lead
0.55
鹵0.05
鈥?/div>
2SK3539
脳
2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
T
T
ch
T
stg
Rating
50
鹵7
100
200
125
125
鈭?5
to
+125
Unit
V
V
mA
mA
mW
擄C
擄C
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
0 to 0.02
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
SSMini6-F1 Package
Marking Symbol: 7Y
Internal Connection
6
5
4
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚
fs
錚?/div>
C
iss
C
oss
C
rss
t
on
t
off
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
鈩?/div>
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
鈩?/div>
Conditions
I
D
=
10
碌A(chǔ),
V
GS
=
0
V
DS
=
50 V, V
GS
=
0
V
GS
= 鹵7
V, V
DS
=
0
I
D
=
1
碌A(chǔ),
V
DS
=
3 V
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
Forward transfer admittance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on time
Turn-off time
I
D
=
10 mA, V
GS
=
4.0 V
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
20
0.9
50
1
Min
2
Typ
3
Max
Unit
V
1.0
鹵5
碌A(chǔ)
碌A(chǔ)
V
鈩?/div>
mS
pF
pF
pF
ns
ns
1.2
8
6
60
12
7
3
200
200
1.5
15
12
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
0.10 max.
鈻?/div>
Basic Part Number
5藲
(0.20)
Publication date: June 2004
SJJ00289AED
1

UP04878相關(guān)型號(hào)PDF文件下載

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  • 英文版
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  • 英文版
    Silicon NPN epitaxial planar type
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  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
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  • 英文版
    Silicon NPN epitaxial planar type
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