鈥?/div>
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
鈭?0%
0.08
4.7
0.10
150
4.9
0.2
+30%
0.12
80
0.3
Min
50
50
0.1
0.5
2
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
V
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJJ00250BED
0.10 max.
5藲
0.55
鹵0.05
(0.20)
鈻?/div>
Features
1.60
鹵0.05
1
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