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UP01878 Datasheet

  • UP01878

  • Composite Device - Composite Transistors

  • 80.25KB

  • 3頁

  • ETC

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Composite Transistors
UP01878
Silicon N-channel MOSFET
Unit: mm
(0.30)
0.20
鈥?.02
4
1.20
鹵0.05
1.60
鹵0.05
+0.05
0.10
鹵0.02
For switching
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
5
1
1.00
鹵0.05
1.60
鹵0.05
鈻?/div>
Basic Part Number of Element
鈥?/div>
2SK3539
脳
2 elements
Display at No.1 lead
0.55
鹵0.05
5藲
(0.20)
2
3
(0.50) (0.50)
5藲
(0.20)
Parameter
Rating
of
element
Drain to source voltage
Gate to source voltage
Drain current
Max drain current
Overall
Allowable power dissipation
*
Channel temperature
Storage temperature
Note) *: Total power dissipation
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Rating
50
鹵7
100
200
125
125
鈭?5
to
+125
Unit
V
V
mA
mA
mW
擄C
擄C
FET1
1: Gate (FET1)
2: Source
3: Gate (FET2)
0 to 0.02
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
4: Drain (FET2)
5: Drain (FET1)
SMini5-G1 Package
Marking Symbol: AL
Internal Connection
5
4
FET2
1
2
3
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain to source voltage
Drain cut-off current
Gate cut-off current
Gate threshold voltage
Drain on-state resistance
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚
fs
錚?/div>
C
iss
C
oss
C
rss
t
on
t
off
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
鈩?/div>
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
鈩?/div>
Conditions
I
D
=
10
碌A,
V
GS
=
0
V
DS
=
50 V, V
GS
=
0
V
GS
= 鹵7
V, V
DS
=
0
I
D
=
1
碌A,
V
DS
=
3 V
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
*
Turn-off time
*
I
D
=
10 mA, V
DS
=
4.0 V
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
20
0.9
1.2
8
6
60
12
7
3
200
200
Min
50
1.0
鹵5
1.5
15
12
mS
pF
pF
pF
ns
ns
Typ
Max
Unit
V
碌A
碌A
V
鈩?/div>
Note) *: Refer to t
on
, t
off
test circuit (next page)
0.10 max
Publication date: July 2002
SJJ00265AED
1

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