鈥?/div>
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
脳
1.0 mm (height 0.39 mm)
3
2
1
1.00
鹵0.05
0.60
鹵0.05
0.39
+0.01
鈭?.03
0.15
鹵0.05
0.05
鹵0.03
0.35
鹵0.01
0.25
鹵0.05
0.25
鹵0.05
1
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?0
100
125
鈭?5
to
+125
Unit
V
V
mA
mW
擄C
擄C
0.50
鹵0.05
3
0.65
鹵0.01
2
0.05
鹵0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Marking Symbol: 3T
Internal Connection
C
B
R
1
R
2
E
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
鈭?0%
0.17
10
0.21
80
鈭?.9
鈭?/div>
0.2
+30%
0.25
80
鈭?/div>
0.25
Min
鈭?0
鈭?0
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.2
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
V
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
SJH00091AED
1
UNRF1A4相關(guān)型號(hào)PDF文件下載
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