packing.
鈥?/div>
Flat lead type, high mounting efficiency
0.12
+0.03
鈥?.01
1.60
鹵0.05
0.85
+0.05
鈥?.03
1
0.27
鹵0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
5擄
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?00
125
125
鈭?5
to
+125
Unit
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
0.10 max.
EIAJ: SC-81
SSMini3-F1 Type Package
Marking Symbol: EY
Internal Connection
R
1
(22 k鈩?
B
R
2
(47 k鈩?
E
C
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
Input resistance
Resistance ratio
Transition frequency
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Conditions
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
I
C
= 鈭?0 碌A,
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
鈭?0%
22
0.47
80
MHz
鈭?.9
鈭?/div>
0.2
+30%
鈭?0
鈭?0
80
400
鈭?/div>
0.25
V
V
V
k鈩?/div>
Min
Typ
Max
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.2
Unit
碌A
碌A
mA
V
V
Note) The part number in the parenthesis shows conventional part number.
0.70
+0.05
鈥?.03
5擄
(0.375)
1
UNR911TJ(UN911TJ)相關型號PDF文件下載
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英文版
Transistors with built-in Resistor
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
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英文版
Transistors with built-in Resistor
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
ETC
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英文版
Transistors with built-in Resistor
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
ETC
1
2
3
