Transistors with built-in Resistor
UNR8231/UNR8231A
(UN8231/UN8231A)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching
0.7
6.9
鹵0.1
4.0
(1.0)
(0.2)
4.5
鹵0.1
2.5
鹵0.1
(0.8)
(0.5)
I
Features
G
G
G
High forward current transfer ratio h
FE
.
Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
Available in a type with radial taping.
0.65 max.
(1.0)
14.5
鹵0.5
I
Absolute Maximum Ratings
Parameter
Collector to
base voltage
UNR8231
UNR8231A
UNR8231
Symbol
V
CBO
V
CEO
I
CP
I
C
P
T
*
T
j
T
stg
(Ta=25藲C)
Ratings
20
60
20
50
1.5
0.7
1
150
鈥?5 to +150
Unit
V
0.45
+0.10
鈥?.05
2.5
鹵0.5
2.5
鹵0.5
1.05
鹵0.05
0.45
+0.10
鈥?.05
1
2
3
Collector to
emitter voltage UNR8231A
Peak collector current
Collector current
Total power dissipation
Junction temperature
Storage temperature
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
V
A
A
W
藲C
藲C
R1(1k鈩?
Internal Connection
C
B
R2
(47k鈩?
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
E
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UNR8231
UNR8231A
UNR8231
UNR8231A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
*
V
CE(sat)
*
R
1
R
1
/R
2
f
T
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 5mA
0.7
0.016
1
0.021
200
20
60
20
50
800
2100
0.4
1.3
0.025
MHz
*Pulse measurement
V
k鈩?/div>
min
typ
max
1
10
0.5
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
Collector to emitter voltage
V
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
Transition frequency
Note) The Part numbers in the Parenthesis show conventional part number.
1
1
2
3
