Transistors with built-in Resistor
UNR7231
(UN7231)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of the low frequency
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
0.4max.
G
G
High forward current transfer ratio h
FE
.
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
I
CP
P
T
*
T
j
T
stg
(Ta=25藲C)
marking
Ratings
20
20
0.7
1.5
1.0
150
鈥?5 to +150
Unit
V
V
A
A
W
藲C
藲C
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC鈥?2
Mini-Power Type Package
Marking Symbol:
IC
Internal Connection
R1(1k鈩?
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
C
B
R2
(47k鈩?
E
I
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Input resistance
Resistance ratio
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
f
T
R
1
R
1
/R
2
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 150mA*
I
C
= 500mA, I
B
= 5mA*
V
CB
= 20V, I
E
= 鈥?0mA, f = 200MHz
0.7
0.016
55
1
0.021
1.3
0.025
*Pulse measurement
20
20
800
2100
0.4
V
MHz
k鈩?/div>
min
typ
max
1
10
0.5
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
V
Note.) The Part number in the Parenthesis shows conventional part number.
2.5鹵0.1
+0.25
I
Features
2.6鹵0.1
1
1
2
3
