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UNR5226 Datasheet

  • UNR5226

  • Composite Device - Transistors with built-in Resistor

  • 5頁

  • ETC

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Transistors with built-in Resistor
UNR5225/5226/5227
Silicon NPN epitaxial planar type
(0.425)
For muting
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
, optimum for the
muting circuit
鈥?/div>
The use with high current value is possible
Unit: mm
0.3
+0.1
鈥?.0
3
0.15
+0.10
鈥?.05
1.25
鹵0.10
2.1
鹵0.1
5藲
1
2
(0.65) (0.65)
Marking symbol
鈥?/div>
UNR5225
FZ
鈥?/div>
UNR5226
FY
鈥?/div>
UNR5227
FW
(R
1
)
10 k鈩?/div>
4.7 k鈩?/div>
6.8 k鈩?/div>
(R
2
)
錚?/div>
錚?/div>
6.8 k鈩?/div>
1.3
鹵0.1
2.0
鹵0.2
10藲
0.9
鹵0.1
0.9
+0.2
鈥?.1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
20
5
600
150
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
B
R
2
R
1
Internal Connection
C
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
E
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current
transfer ratio
UNR5227
UNR5225/5226
V
CE(sat)
R
1
I
C
=
50 mA, I
B
=
2.5 mA
鈭?0%
4.7
6.8
10
R
1
/R
2
R
on
V
I
=
7 V, R
L
=
1 k鈩? f
=
1 kHz
0.8
1.0
0.95
1.1
1.5
f
T
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
200
MHz
1.2
錚?/div>
鈩?/div>
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Conditions
I
C
=
1
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
1
碌A(chǔ),
I
C
=
0
V
CB
=
30 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
50 mA
70
100
600
80
+30%
mV
k鈩?/div>
Min
30
20
5
1
1
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Collector-emitter saturation voltage
Input resistance
UNR5226
UNR5227
UNR5225
Resistance ratio
ON resistance
*
UNR5227
UNR5226
UNR5227
UNR5225
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to R
on
measurement circuit
Publication date: January 2004
SJH00043BED
0.2
鹵0.1
鈻?/div>
Resistance by Part Number
1

UNR5226相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...

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