reduction of the number of parts.
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing
(0.425)
0.3
+0.1
鈥?.0
3
0.15
+0.10
鈥?.05
1.25
鹵0.10
2.1
鹵0.1
5擄
1
2
0.2
鹵0.1
0.9
鹵0.1
0 to 0.1
0.9
+0.2
鈥?.1
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.2
10擄
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?00
150
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 7P
Internal Connection
R
1
(10 k鈩?
B
R
2
E
(47 k鈩?
C
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
Input resistance
Resistance ratio
Forward voltage (DC)
Gain bandwidth product
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
V
F
f
T
I
F
=
100 mA
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
鈭?0%
0.17
10
0.21
0.95
80
鈭?.9
鈭?/div>
0.2
+30%
0.25
1.2
V
MHz
80
鈭?/div>
0.25
V
V
V
k鈩?/div>
Min
鈭?0
鈭?0
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.2
mA
Typ
Max
Unit
V
V
碌A(chǔ)
Publication date: May 2002
SJH00046AED
1
UNR5174相關(guān)型號(hào)PDF文件下載
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英文版
Silicon PNP epitaxial planar type
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英文版
Silicon PNP epitaxial planar type
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英文版
Silicon PNP epitaxial planar type
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英文版
Silicon PNP epitaxial planar type
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英文版
Silicon PNP epitaxial planar type
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Silicon PNP epitaxial planar type
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英文版
Silicon PNP epitaxial planar type
PANASONIC ...
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英文版
Silicon PNP epitaxial planar type
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英文版
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