飩?/div>
Electrical Characteristics
T
a
=
25
擄C鹵3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10
V, I
E
=
鈥?
mA, f =
200
MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2
mA, I
B
=
0
V
CB
=
50
V, I
E
=
0
V
CE
=
50
V, I
B
=
0
V
EB
=
6
V, I
C
=
0
V
CE
=
10
V, I
C
=
5
mA
I
C
=
10
mA, I
B
=
0.3
mA
V
CC
=
5
V, V
B
=
0.5
V, R
L
=
1
k
鈩?/div>
k鈩?/div>
V
CC
=
5
V, V
B
=
6
V, R
L
=
1
k
鈩?/div>
k鈩?/div>
鈥?0%
1.7
47
2.1
150
4.9
0.2
+30%
2.6
60
0.25
Min
50
50
0.1
0.5
0.2
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
V
k
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
0.15 max.
Publication date: November
2004
SJH00106AED
1
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