鈥?/div>
10 000 pcs per 1 reel, reducing reel change frequency.
0.23
+0.05
鈥?.02
1
2
5擄
SSSMini3-F1 Type Package
Marking Symbol: 6C
Internal Connection
R
1
(47 k鈩?
B
R
2
(47 k鈩?
E
C
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
Input resistance
Resistance ratio
Transition frequency
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= 鈭?0
V, I
E
= 1
mA, f
=
200 MHz
Conditions
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
鈭?0%
0.8
47
1.0
80
鈭?.9
鈭?/div>
0.2
+30%
1.2
MHz
鈭?0
鈭?0
80
鈭?/div>
0.25
V
V
V
k鈩?/div>
Min
Typ
Max
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.1
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
V
0.15 max.
0.15 min.
0.80
鹵0.05
1.20
鹵0.05
I
Features
3
1
UNR3113相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SMT
ETC
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英文版
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複合デバイス － 抵抗內(nèi)蔵型トランジスタ
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英文版
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ETC
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PANASONIC
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英文版
複合デバイス － 抵抗內(nèi)蔵型トランジスタ
ETC
-
英文版
Silicon PNP epitaxial planar type
PANASONIC
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英文版
Silicon PNP epitaxial planar type
PANASONIC
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英文版
Silicon PNP epitaxial planar type
PANASONIC
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英文版
Silicon PNP epitaxial planar type
PANASONIC
-
英文版
複合デバイス － 抵抗內(nèi)蔵型トランジスタ
ETC
-
英文版
Silicon PNP epitaxial planar type
PANASONIC
1
2
