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UNR2222(UN2222) Datasheet

  • UNR2222(UN2222)

  • Composite Device - Transistors with built-in Resistor

  • 6頁(yè)

  • ETC

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Transistors with built-in Resistor
UNR2221/2222/2223/2224
(UN2221/2222/2223/2224)
Silicon NPN epitaxial planer transistor
Unit : mm
For digital circuits
s
Features
鈥?/div>
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
0.16
+0.10
鈥?.06
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
s
Resistance by Part Number
鈥?/div>
UNR2221
鈥?/div>
UNR2222
鈥?/div>
UNR2223
鈥?/div>
UNR2224
Marking Symbol (R
1
)
(UN2221)
9A
2.2 k鈩?/div>
(UN2222)
9B
4.7 k鈩?/div>
(UN2223)
9C
10 k鈩?/div>
(UN2224)
9D
2.2 k鈩?/div>
(R
2
)
2.2 k鈩?/div>
4.7 k鈩?/div>
10 k鈩?/div>
10 k鈩?/div>
10藲
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
s
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
500
200
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
B
R
2
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
C
0 to 0.1
E
s
Electrical Characteristics
T
a
=
25擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter
cutoff
current
UNR2221
UNR2222
UNR2223/2224
V
CBO
V
CEO
h
FE
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
100 mA
50
50
40
50
60
V
CE(sat)
V
OH
V
OL
I
C
=
100 mA, I
B
=
5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
500
鈩?/div>
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
500
鈩?/div>
4.9
0.2
0.25
V
V
V
I
EBO
Conditions
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
Typ
Max
1
1
5
2
1
V
V
mA
Unit
碌A(chǔ)
Collector to base voltage
Collector to emitter voltage
Forward
current
UNR2221
UNR2222
transfer ratio UNR2223/2224
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2002
SJH00012BED
0.4
鹵0.2
5藲
1

UNR2222(UN2222)相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
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    下載
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC

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