鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
R
2
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
鈭?0%
100
100
80
0.25
+30%
V
k鈩?/div>
MHz
Min
50
50
0.1
0.5
100
Typ
Max
Unit
V
V
碌A
碌A
碌A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.4
鹵0.2
5藲
Publication date: December 2003
SJH00011BED
1
1
2
