Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L)
6.9
鹵0.1
2.5
鹵0.1
(1.5)
3.5
鹵0.1
(1.0)
2.0
鹵0.2
2.4
鹵0.2
Unit: mm
(1.0)
Silicon NPN epitaxial planar transistor
For digital circuits
(0.4)
(1.5)
R 0.9
R 0.7
G
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
鹵0.1
I
Features
(0.85)
1.25
鹵0.05
0.45
鹵0.05
0.55
鹵0.1
3
2
(2.5)
1
I
Resistance by Part Number
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
(2.5)
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
UNR1210
UNR121D
UNR121E
UNR121F
UNR121K
UNR121L
(R
1
)
10k鈩?/div>
22k鈩?/div>
47k鈩?/div>
10k鈩?/div>
10k鈩?/div>
4.7k鈩?/div>
22k鈩?/div>
0.51k鈩?/div>
1k鈩?/div>
47k鈩?/div>
47k鈩?/div>
47k鈩?/div>
4.7k鈩?/div>
10k鈩?/div>
4.7k鈩?/div>
(R
2
)
10k鈩?/div>
22k鈩?/div>
47k鈩?/div>
47k鈩?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.1k鈩?/div>
10k鈩?/div>
鈥?/div>
10k鈩?/div>
22k鈩?/div>
10k鈩?/div>
4.7k鈩?/div>
4.7k鈩?/div>
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R1
C
B
R2
E
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
50
50
100
400
150
鈥?5 to +150
Unit
V
V
mA
mW
藲C
藲C
Note) The part numbers in the parenthesis show conventional part number.
4.1
鹵0.2
4.5
鹵0.1
1
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英文版
Silicon PNP epitaxial planer transistor
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