Transistors with built-in Resistor
UN8231/UN8231A
Silicon NPN epitaxial planer transistor
Unit: mm
0.15
For switching
6.9鹵0.1
0.7
4.0
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.65 max.
q
0.45
鈥?.05
+0.1
Parameter
Collector to
base voltage
UN8231
UN8231A
Symbol
V
CBO
V
CEO
I
CP
I
C
P
T
*
T
j
T
stg
Ratings
20
60
20
50
1.5
0.7
1
150
鈥?5 to +150
Unit
V
UN8231
Collector to
emitter voltage UN8231A
Peak collector current
Collector current
Total power dissipation
Junction temperature
Storage temperature
1 : Emitter
2 : Collector
3 : Base
MT-2 Type Package
V
A
A
W
藲C
藲C
R1(1k鈩?
Internal Connection
2.5鹵0.1
s
Absolute Maximum Ratings
1
2
3
(Ta=25藲C)
0.45
鈥?.05
+0.1
2.5鹵0.5
2.5鹵0.5
C
B
R2
(47k鈩?
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN8231
UN8231A
UN8231
UN8231A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
*
V
CE(sat)
*
R
1
R
1
/R
2
f
T
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 5mA
0.7
0.016
1
0.021
200
20
60
20
50
800
2100
0.4
1.3
0.025
MHz
*Pulse measurement
V
k鈩?/div>
min
typ
max
1
10
0.5
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
Collector to emitter voltage
14.5鹵0.5
q
1.0 1.0
q
High forward current transfer ratio h
FE
.
Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
Available in a type with radial taping.
0.2
s
Features
0.5
4.5鹵0.1
V
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
Transition frequency
1
1
2
