鈥?/div>
High efficiency with super miniature, 0.08 cc package(7.5
脳
7.5
脳
1.7 mm)
蠁
0.8
12
11
10
1
2
3
6
7.3
7.5鹵0.15
5
4
4.0
s
Absolute Maximum Ratings
T
a
=25擄C
Parameter
Power supply voltage 1
*1
Power supply voltage 2
*1
Circuit current 1
Circuit current 2
Gate voltage
Max input power
Allowable power dissipation
*3
Case temperature
*3
Storage temperature
Symbol
V
DD1
V
DD2
I
DD1
I
DD2
V
GG
P
IN
P
D
T
case
T
stg
Ratings
6
6
200
600
鈭?
9
2
鈭?0
to
+90
鈭?0
to
+120
Unit
V
V
mA
mA
V
dBm
W
擄C
擄C
1 : P
IN
2 : V
DD1
3 : V
DD2
4 : P
OUT
4-0.7
7
8
(0.9)
2-1.2
4.0
7.5鹵0.15
9
1.5鹵0.2
0.59
Tolerance dimension
without indication
: 鹵0.3
5 : GND
6 : V
GG
7 : GND
8 : GND
PAM01
9 : GND
10 : GND
11 : GND
12 : GND
Marking Symbol : KK
Note) *1 : V
GG
=鈭?.5
V
*2 : T
case
=25擄C
*3 : The reverse of the device is solderd to the plate
s
Electrical Characteristics
V
GG
=鈭?.5
V, f=887 MHz to 925 MHz, T
a
=25擄C鹵3擄C,
Nominal : Z
S
=Z
L
=50 鈩?/div>
Parameter
Idle current
Gate current
Gain 1
*2, 3
2nd harmonics
*1, 3
3rd harmonics
*1, 3
Voltage standing wave ratio
*1, 3
Adjacent channel leakage
power suppression 1
*2, 3
Adjacent channel leakage
power suppression 2
*2, 3
*2, 3
Symbol
Iidl
I
GG
I
DD1
G1
2f
O
3f
O
V
SWR IN
ACPR1
ACPR2
Conditions
V
DD1
=V
DD2
=3.5
V, P
IN
=No
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
鹵900
kHz Detuning, 30 kHz Bandwidth
V
DD1
=V
DD2
=3.5
V, P
OUT
=26.5
dBm
鹵1980
kHz Detuning, 30 kHz Bandwidth
min
typ
110
max
140
4
Unit
mA
mA
mA
dB
Circuit current 1
*2, 3
410
25.0
27.5
450
鈭?0
鈭?0
3
鈭?5
鈭?7
dBc
dBc
dBc
dBc
Note) *1 : No modulation.
*2 : Offset from QPSK signal.
*3 : Measurement point of input and output power is made to the terminal of device.
1
1
