EMX4 / UMX4N / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
External dimensions
(Units : mm)
EMX4
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
!
Equivalent circuits
EMX4 / UMX4N
(3)
(2)
(1)
IMX4
(4)
(5)
(6)
ROHM : EMT6
Each lead has same dimensions
UMX4N
(4)
(5)
(6)
(3)
(2)
(1)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(4)
(3)
0.5
0.5 0.5
1.0
1.6
2.0
0.2
(5)
(6)
1.25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX4 / UMX4N
IMX4
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
18
3
50
150(TOTAL)
300(TOTAL)
150
鈭?5
~
+150
Unit
V
V
V
mA
mW
ROHM : UMT6
EIAJ : SC-88
0.15
!
Absolute maximum ratings
(Ta=25擄C)
2.1
0~0.1
0.1Min.
鈭?
鈭?
IMX4
(6)
Junction temperature
Storage temperature
鈭?
120mW per element must not be exceeded.
鈭?
200mW per element must not be exceeded.
擄C
擄C
0.3
(5)
(4)
1.6
2.8
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX4
EMT6
X4
T2R
8000
UMX4N
UMT6
X4
TR
3000
IMX4
SMT6
X4
T108
3000
ROHM : SMT6
EIAJ : SC-74
0.15
0.3Min.
0~0.1
Each lead has same dimensions
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
Transition frequency
Output capacitance
鈭桾ransition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
Min.
30
18
3
鈭?/div>
鈭?/div>
27
鈭?/div>
0.5
600
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
1
1500
0.95
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
270
0.5
2
鈭?/div>
1.6
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
鈭?/div>
V
鈭?/div>
MHz
pF
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=10V
V
EB
=2V
Conditions
V
CE
/I
C
=10V/10mA
I
C
/I
B
=20mA/4mA
V
CE
/I
C
=10V/10mA
V
CE
/I
C
=10V/10mA,
f=200MHz
V
CB
/f=10V/1MHz, I
E
=0A
(3)
(2)
(1)
(1)
Each lead has same dimensions
(2)
鈭?/div>
UMX4NTR 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 陣列
-
2 NPN（雙）
50mA
20V
500mV @ 4mA，20mA
-
56 @ 10mA，10V
150mW
1.5GHz
表面貼裝
6-TSSOP，SC-88，SOT-363
UMT6
帶卷 (TR)
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