EMD6 / UMD6N / IMD6A
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
!
Features
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMD6
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D6
!
Structure
A PNP and NPN digital transistor
(each with a single built in resistor)
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(3)
EMD6N
0.2
0.5
0.5 0.5
1.0
1.6
2.0
(6)
(5)
1.25
2.1
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the 鈥?/div>
鈭掆€?/div>
sign on DTr
2
values for the PNP
type have been omitted.
0.15
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D6
!
Equivalent circuit
EMD6 / UMD6N
(3) (2)
R
1
(1)
IMD6A
IMD6A
(5)
(2)
(4) (5)
R
1
0.3
(6)
(6)
(4)
DTr
1
DTr
2
R
1
=4.7k鈩?/div>
(4)
R
1
(5)
DTr
2
R
1
(2)
DTr
1
1.6
0.15
(6)
(3)
R
1
=4.7k鈩?/div>
(1)
2.8
0.3to0.6
0to0.1
Each lead has same dimensions
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector EMD6, UMD6N
power
dissipation IMD6A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
鈭?5鈭?150
藲C
藲C
Unit
V
V
V
mA
mW
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D6
鈭?/div>
1
鈭?/div>
2
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(3)
(1)
(1)
(2)
UMD6N 產(chǎn)品屬性
4.7 k
表面貼裝
1.25mm
UMT
2 x 1.25 x 0.9mm
6
NPN，PNP
-55 °C
5 V
100 mA
50 V
0.3 V
100
+150 °C
雙
2mm
0.9mm
UMD6N相關型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
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