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UMC3NT2G Datasheet

  • UMC3NT2G

  • Dual Common Base−Collector Bias Resistor Transistors

  • 10頁

  • ONSEMI

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UMC2NT1, UMC3NT1,
UMC5NT1
Preferred Devices
Dual Common
Base鈭扖ollector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base鈭抏mitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
complementary BRT devices are housed in the SOT鈭?53 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
http://onsemi.com
3
R1
2
R2
1
R2
Q1
R1
4
Q2
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Pb鈭扚ree Packages are Available
MARKING
DIAGRAM
5
SC鈭?8A/SOT鈭?53
CASE 419A
STYLE 6
1
4
Ux M
G
G
2
3
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
and Q
2
, 鈭?minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Ux
= Device Marking
x
= 2, 3 or 5
M
= Date Code
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
THERMAL CHARACTERISTICS
Thermal Resistance 鈭?Junction-to-Ambient
(surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation
@ T
A
= 25擄C (Note 1)
R
qJA
T
J
, T
stg
P
D
833
鈭?5 to
+150
*150
擄C/W
擄C
mW
Preferred
devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
漏
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 6
Publication Order Number:
UMC2NT1/D

UMC3NT2G 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Switching (Resistor Biased)

  • Dual Common Base and Collector

  • PNP

  • 10 KOhms

  • 1

  • SMD/SMT

  • SC-88A/SOT-353

  • 50 V

  • 100 mA

  • 100 mA

  • 150 mW

  • + 150 C

  • Reel

  • - 65 C

  • 3000

UMC3NT2G相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-25VAR
    ETC
  • 英文版
    Power management (dual digital transistors)
    ROHM
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Common Base-Collector Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Common Base−Collector Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Common Base−Collector Bias Resistor Transistors
    ONSEMI [ON...

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