EMB9 / UMB9N / IMB9A
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
!
Features
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMB9
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
0.2
(6)
1.25
0.1Min.
0to0.1
The following characteristics apply to both DTr
1
and
DTr
2
.
2.1
0.15
Each lead has same dimensions
!
Equivalent circuit
EMB9 / UMB9N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10k鈩?/div>
R
2
=47k鈩?/div>
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : B9
IMB9A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10k鈩?/div>
R
2
=47k鈩?/div>
(1)
IMB9A
(6)
0.3
(4)
(5)
1.6
2.8
0.15
(6)
0.3to0.6
0to0.1
Each lead has same dimensions
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
鈭?0
鈭?0
6
Output current
EMB9, UMB9N
Power
dissipation IMB9A
Junction temperature
Storage temperature
鈭?0
鈭?00
150 (TOTAL)
300 (TOTAL)
150
鈭?5鈭?150
藲C
藲C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B9
mA
mW
鈭?/div>
1
鈭?/div>
2
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(1)
2.0
(5)
(2)
!
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
Abbreviated symbol : B9
0.65
(4)
(3)
UMB9N
0.5
0.5 0.5
1.0
1.6
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