EMB2 / UMB2N / IMB2A
Transistors
General purpose
(dual digital transistors)
EMB2 / UMB2N / IMB2A
Features
1) Two DTA144E chips in a EMT or UMT or SMT
package.
2) Same size as EMT3 or UMT3 or SMT3 package, so
same mounting machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
External dimensions
(Units : mm)
EMB2
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B2
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
UMB2N
(4)
0.65
(3)
0.5
0.5 0.5
1.0
1.6
0.2
(6)
1.25
0.15
The following characteristics apply to both DTr
1
and
DTr
2
.
2.1
0.1Min.
0to0.1
Equivalent circuit
EMB2 / UMB2N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=47k鈩?/div>
R
2
=47k鈩?/div>
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
IMB2A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=47k鈩?/div>
R
2
=47k鈩?/div>
(1)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : B2
IMB2A
(6)
0.3
(4)
(5)
(6)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
鈭?0
鈭?0
10
Output current
EMB2, UMB2N
Power
dissipation IMB2A
Junction temperature
Storage temperature
鈭?0
鈭?00
150 (TOTAL)
300 (TOTAL)
150
鈭?5鈭?150
藲C
藲C
Unit
V
V
0.3to0.6
0to0.1
(3)
(2)
(1)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B2
mA
mW
鈭?/div>
1
鈭?/div>
2
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(1)
Each lead has same dimensions
Each lead has same dimensions
2.0
(5)
(2)
UMB2N 產(chǎn)品屬性
1
47 k
表面貼裝
1.25mm
UMT
2 x 1.25 x 0.9mm
6
PNP
-55 °C
100 mA
68
+150 °C
雙
2mm
0.9mm
UMB2N相關(guān)型號PDF文件下載
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