EMB10 / UMB10N / IMB10A
Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
Features
1) Two DTA123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMB10
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B10
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
UMB10N
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(3)
0.5
0.5 0.5
1.0
1.6
0.2
(6)
1.25
The following characteristics apply to both DTr
1
and
DTr
2
.
2.1
0.15
0.1Min.
0to0.1
Equivalent circuit
EMB10 / UMB10N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=2.2k鈩?/div>
R
2
=47k鈩?/div>
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : B10
IMB10A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=2.2k鈩?/div>
R
2
=47k鈩?/div>
(1)
IMB10A
(6)
0.3
(5)
(4)
(6)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
鈭?0
鈭?2
5
Output current
EMB10, UMB10N
Power
dissipation IMB10A
Junction temperature
Storage temperature
鈭?00
鈭?00
150 (TOTAL)
300 (TOTAL)
150
鈭?5
to
+150
藲C
藲C
Unit
V
V
0.3to0.6
0to0.1
(3)
(2)
(1)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B10
mA
鈭?/div>
1
鈭?/div>
2
mW
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(1)
Each lead has same dimensions
Each lead has same dimensions
Rev.A
2.0
(5)
(2)
1/2
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