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UHBM45

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI UHBM45

is Designed for

PACKAGE STYLE .230 6L FLG

FEATURES:

鈥?/div>

Omnigold鈩?/div>

Metalization System

.040x45擄

4X .025 R

.115

.430 D

E

.125

G

F

H

I

J K

L

A

C

B

2X脴.130

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

CES

V

EBO

P

DISS

T

J

T

STG

胃

JC

9.0 A

36 V

18 V

36 V

4.0 V

150 W @ T

C

= 25 C

-65

O

C to +200

O

C

-65 C to +150 C

1.2

O

C/W

O

DIM

A

B

C

D

E

F

G

H

I

J

K

L

MINIMUM

inches / mm

MAXIMUM

inches / mm

.355 / 9.02

.115 / 2.92

.075 / 1.91

.225 / 5.72

.090 / 2.29

.720 / 18.29

.970 / 24.64

.355 / 9.02

.004 / 0.10

.120 / 3.05

.160 / 4.06

.230 / 5.84

.365 / 9.27

.125 / 3.18

.085 / 2.16

.235 / 5.97

.110 / 2.79

.730 / 18.54

.980 / 24.89

.365 / 9.27

.006 / 0.15

.130 / 3.30

.180 / 4.57

.260 / 6.60

ORDER CODE: ASI10667

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CES

BV

EBO

I

CBO

h

FE

C

OB

P

G

畏

C

I

C

= 50 mA

I

C

= 50 mA

I

E

= 10 mA

V

CB

= 15 V

T

C

= 25 C

O

NONETEST

CONDITIONS

R

BE

= 10

鈩?/div>

MINIMUM TYPICAL MAXIMUM

36

18

4.0

5

UNITS

V

mA

---

pF

dB

V

CE

= 5.0 V

V

CB

= 12.5 V

V

CE

= 12.5 V

I

C

= 1.0 A

f = 1.0 MHz

P

OUT

= 45 W

f = 836 MHz

5

80

4.7

35

200

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

鈥?/div>

NORTH HOLLYWOOD, CA 91605

鈥?/div>

(818) 982-1200

鈥?/div>

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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UHBM45

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NPN SILICON RF POWER TRANSISTOR

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UHBM45
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NPN SILICON RF POWER TRANSISTOR

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UHBM45

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