鈾?/div>
Glass passivated chip junction
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Case:
JEDEC TO-220AC molded plastic body
Terminals:
Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25擄C ambient temperature unless otherwise specified.
SYMBOLS
UG8FT
UG8GT
UNITS
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100擄C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
Maximum reverse leakage current
at working peak reverse voltage
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
MaximumReverse recovery time at
I
F
=1.0A, di/dt=100A/碌s, V
R
=30V, I
rr
=0.1 I
RM
Maximum reverse recovery current at
I
F
=10A, di/dt=50A/碌s,V
R
=30V
Maximum stored charge
I
F
=2A, di/dt=20A/碌s, V
R
=30V, I
rr
=0.1 I
RM
Typical thermal resistance from junction to case
Operating junction and storage temperature range
NOTE:
(1) Pulse test: 300碌s pulse width, 1% duty cycle
NOTICE:
Advanced product information is subject to change without notice
12/16/98
V
RRM
V
RWM
V
RMS
V
DC
I
(AV)
I
FSM
T
J
=25擄C
T
J
=150擄C
T
C
=25擄C
T
C
=100擄C
300
225
210
300
8.0
100.0
1.30
1.00
10
350
35
50
5.5
55
2.2
400
300
280
400
Volts
Volts
Volts
Volts
Amps
Amps
V
F
I
R
t
rr
t
rr
I
RM
Q
rr
R
螛JC
T
J
, T
STG
Volts
碌A(chǔ)
ns
ns
Amps
nC
擄C/W
擄C
T
C
=100擄C
-40 to+150
1
2
