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RF MOSFET Power Transistor, 2OW, 28V

100 - 500 MHz

Features

N-Channel Enhancement

DMOS Structure

Lower Capacitances

Mode Device

Operation

Devices

UF2820R

for Broadband

High Saturated Output Power

Lower Noise Figure Than Competitive

. .

Absolute Maximum Ratings at 25擄C

Parameter

Drain-SourceVoltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

Junction Temperature

StorageTemperature

Thermal Resistance

1 Symbol 1

V

OS

VGS

I

OS

PO

Rating

6.5

20

4

61

200

-55 to +150

2.66

Units

V

V

A

w

鈥淐

鈥淐

鈥淐/W

T

T

ST0

8

JC

Electrical Characteristics

at 25擄C

Input Capacitance

Output Capacitance

Reverse Capacitance

Power Gain

Drain Efficiency

Load Mismatch Tolerance

Cass

CRss

GP

00

V,,=28.0 V, F=l .OMHz

30

8

10

50

-

-

-

2O:l

PF

PF

dB

%

-

V,,=28.0 V, F=l .OMHz

V,,=28.0 V, F=l .OMHz

V,,=28.0 V, 1,,=100.0 mA, P,fl20.0

V,,=28.0 V, I,,=1 00.0 mA, P,s20.0

V,,=28.0 V, l,,=lOO.O mA, P,e20.0

W, F=500 MHz

W, F=500 MHz

W, F=500 MHz

VSWR-T

Specifications Subject

to

Change

Without Notice.

MIA-COM,

Inc.

next

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