=
EC
---
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z
=
an
AMP
company
RF MOSFET Power Transistor, 15W, 28V
100 - 500 MHz
Features
l
l
l
l
l
l
UF28156
v2.00
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower -Noise Floor
100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25擄C
L
n
3.66
.lO
4.32
35
344
JJ04 1
.l70
DO6
Electrical Characteristics
at 25擄C
InputCapacitance
Output Capacitance
ReverseCapacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Ccm
CRSS
GP
鈥?D
VSWR-T
10
50
-
15
7.2
-
-
2O:l
pF
pF
dB
%
-
V,,=28.0 V, F=l .O MHz
Vos=28.0 V, F=l .OMHz
V,,=28.0 V. F=l .OMHz
V,,=28.0 V, 1,,=150.0 mA, P,,$5.0
V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0
V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0
W, F&O0 MHz
W, F=500 MHz
W. F=500 MHz
Specifications
Subject to Change Without Notice.
M/A-COM,
inc.