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Matched, Four-Diode Monolithic Array
High Peak Current
Low-Cost MINIDIP Package
Low-Forward Voltage
Parallelable for Lower V
F
or Higher I
F
Fast Recovery Time
Military Temperature Range Available
DESCRIPTION
This four-diode array is designed for general purpose use as individual
diodes or as a high-speed, high-current bridge. It is particularly useful on
the outputs of high-speed power MOSFET drivers where Schottky diodes
are needed to clamp any negative excursions caused by ringing on the
driven line.
These diodes are also ideally suited for use as voltage clamps when driv-
ing inductive loads such as relays and solenoids, and to provide a path
for current free-wheeling in motor drive applications.
The use of Schottky diode technology features high efficiency through
lowered forward voltage drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both hermetic CERDIP and
copper-leaded plastic packages. The UC1611 in ceramic is designed for
-55擄C to +125擄C environments but with reduced peak current capability:
while the UC3611 in plastic has higher current rating over a 0擄C to +70擄C
ambient temperature range.
CONNECTION DIAGRAM
DIL-8 (TOP VIEW)
N or J Package
SOIC-16 (TOP VIEW)
DW Package
PLCC-20 (TOP VIEW)
Q Package
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