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U3410 Datasheet

  • U3410

  • HEXFET Power MOSFET

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 91607B
IRLR/U3410
HEXFET
廬
Power MOSFET
Logic Level Gate Drive
l
Ultra Low On-Resistance
l
Surface Mount (IRLR3410)
l
Straight Lead (IRLU3410)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 100V
G
S
R
DS(on)
= 0.105鈩?/div>
I
D
= 17A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P A K
T O -2 52 A A
I-P A K
T O -25 1 A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛聟
Repetitive Avalanche Energy聛聟
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
60
79
0.53
鹵 16
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.9
50
110
Units
擄C/W
www.irf.com
1
5/11/98

U3410相關型號PDF文件下載

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    廠商
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  • 英文版
    HEXFET Power MOSFET
    IRF
  • 英文版
    HEXFET Power MOSFET
    IRF [Inter...

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