B-68
01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
樓 Mixer
樓 Oscillator
樓 VHF/UHF Amplifier
Absolute maximum ratings at T
A
= 25隆C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
鈥?25 V
10 mA
300 mW
2.4 mW/擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Gate Forward Transconductance
U311
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
V
GS(F)
I
DSS
20
鈥?
鈥?25
鈥?150
鈥?150
鈥?
1
60
Typ
Max
Unit
V
pA
nA
V
V
mA
Process NJ72L
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
DS
= 10V, I
D
= 1 nA
V
DS
= 脴V, I
G
= 1 mA
V
DS
= 10V, V
GS
= 脴V
T
A
= 150擄C
g
fg
g
og
C
dg
C
gs
1000
17000
250
2.5
5
碌S
碌S
pF
pF
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Common Gate Output Conductance
Gate Drain Capacitance
Gate Source Capacitance
TO脨72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com